Model Number :
NCE80TD65BT
Place of Origin :
original
Brand Name :
original
Price :
CN¥1.44/pieces
Description :
IGBT tube high power, -
Operating Temperature :
-, -
Series :
NCE80
Type :
IGBT Transistor, IGBT
D/C :
23+, 23+
Package Type :
SMD/SMT
Application :
MOSFET driver, All kinds of Electronic Products
Supplier Type :
Other
Media Available :
Photo
Current - Collector (Ic) (Max) :
-
Voltage - Collector Emitter Breakdown (max) :
-
Vce Saturation (Max) @ Ib, Ic :
-
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Power - Max :
-
Frequency - Transition :
-
Mounting Type :
SMD/SMT, SMD/SMT
Package / Case :
TO-247
Resistor - Base (R1) :
SMD/SMT
Resistor - Emitter Base (R2) :
SMD/SMT
FET Type :
-
FET Feature :
-
Drain to Source Voltage (Vdss) :
-
Current - Continuous Drain (Id) @ 25°C :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Frequency :
-
Current Rating (Amps) :
-
Noise Figure :
-
Power - Output :
-
Voltage - Rated :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
Vgs (Max) :
-
IGBT Type :
-
Configuration :
-
Vce(on) (Max) @ Vge, Ic :
-
Input Capacitance (Cies) @ Vce :
-
Input :
-
NTC Thermistor :
--
Voltage - Breakdown (V(BR)GSS) :
-
Current - Drain (Idss) @ Vds (Vgs=0) :
-
Current Drain (Id) - Max :
-
Voltage - Cutoff (VGS off) @ Id :
-
Resistance - RDS(On) :
-
Voltage - Output :
-
Voltage - Offset (Vt) :
-
Current - Gate to Anode Leakage (Igao) :
-
Current - Valley (Iv) :
-
Current - Peak :
-
Transistor Type :
-
Product Name :
NCE80TD65BT
Original fromm :
Original Brand
Detalis :
Please contact us
Shipping by :
DHL\UPS\Fedex\EMS\HK Post
Payment :
Paypal Western Union t/t
Condition :
Brand Newand Original
Warranty :
365 DaysWarranty
Quality :
Original High-quality
Voltage :
-
Applications :
-
Contact Now
